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| 0.5W X, Ku-BAND POWER GaAs FET NE960R575 FEATURES * HIGH OUTPUT POWER: 27.5 dBm TYP @ P1 dB * HIGH LINEAR GAIN: 9.0 dB TYP @ 14.5 GHz * HIGH EFFICIENCY: 30% TYP @ 14.5 GHz * HIGH RELIABILITY * CLASS A OPERATION OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 75 1.8 +0.15 -0.05 2 PLACES GATE SOURCE 2.7 2.3 0.5 0.1 DRAIN 2.7 TYP 7.0 3.0 MIN BOTH LEADS DESCRIPTION The NE950R575 Power GaAs FET covers the 4 GHz to 18 GHz frequency range for commercial amplifiers and oscillator applications. The device incorporates WSi (tungsten silicide) gate and silicon dioxide glassivation. NEC's strigent quality assurance and test procedures assure the highest reliability and performance. +0.06 0.1 -0.02 9.8 MAX 2.3 1.13 0.9 MAX ELECTRICAL CHARACTERISTICS (TA PART NUMBER PACKAGE OUTLINE SYMBOLS GL P1dB POUT CHARACTERISTICS Linear Gain Output Power (1 dB) = 25C) NE950R575 75 UNITS dB dBm dBm % C/W A V V 0.18 -2.5 15 0.4 -1.8 25.5 MIN 8.0 TYP 9.0 27.5 26.5 30 30 0.7 -0.5 MAX TEST CONDITIONS VDS = 9 V IDS = 180 mA set f = 14.5 GHz, Rg = 1K PIN = 19 dBm1 POUT = P1dB1 Channel-to-Case VDS = 1.5 V, VGS = 0 V VDS = 2.5 V, IDS = 2 mA IGD = 2 mA Functional Characteristics Power Out at Fixed Input Power Power Added Efficiency Thermal Resistance Saturated Drain Current Pinch-off Voltage Gate to Drain Break Down Voltage ADD RTH IDSS Vp BVGD Note: 1. VDS = 9 V, IDSQ = 90 mA, f = 14.5 GHz. Electrical Characteristics California Eastern Laboratories NE950R575 ABSOLUTE MAXIMUM RATINGS1 (TA = 25 C) SYMBOLS VDS VGS Pt ID IGF IGR TCH TSTG PARAMETERS Drain to Source Voltage Gate to Source Voltage Total Power Dissipation Drain Current Gate Current (forward) Gate Current (reverse) Channel Temperature Storage Temperature UNITS V V W mA mA mA C C RATINGS 15 -7 3.0 600 5.0 -5.0 175 -65 to +175 RECOMMENDED OPERATING LIMITS SYMBOLS VDS TCH GCOMP PARAMETERS Drain to Source Voltage Channel Temperature Input Power UNITS MIN TYP V C dBcomp 9 MAX 9 130 3 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25C) OUTPUT POWER AND EFFICIENCY vs. INPUT POWER 30 60 300 DRAIN CURRENT AND LINEAR GAIN vs. INPUT POWER 12 Output Power, POUT (dBm) 20 30 200 8 15 f = 14.5 GHz (1 tone) VDS = 9 V, IDSQ = 180 mA RG = 1 K 5 10 15 20 25 15 150 f = 14.5 GHz (1 tone) VDS = 9 V, IDSQ = 180 mA RG = 1 K 6 10 0 100 5 10 15 20 25 4 Input Power, PIN (dBm) Input Power, PIN (dBm) GATE CURRENT vs. INPUT POWER 1.5 f = 14.5 GHz (1 tone) VDS = 9 V, IDSQ = 180 mA RG = 1 K Gate Current, IG (mA) 1.0 0.5 0.0 -0.5 5 10 15 20 25 Input Power, PIN (dBm) Linear Gain, GL (dB) Efficiency, ADD (%) 25 45 Drain Current, ID (mA) 250 10 NE960R575 TYPICAL SCATTERING PARAMETERS (TA = 25C) NE960R575 VDS = 9 V, IDSQ = 180 mA FREQUENCY GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 MAG 0.87 0.84 0.84 0.82 0.81 0.79 0.73 0.69 0.62 0.63 0.76 0.79 0.87 0.87 0.83 S11 ANG -140 -154 -160 -163 -167 -175 171 147 109 47 0 -21 -45 -53 -60 MAG 4.36 2.98 2.36 2.08 1.99 1.96 2.02 2.20 2.30 2.22 1.62 1.30 0.90 0.60 0.43 S21 ANG 85 68 54 42 33 18 1 -20 -51 -88 -124 -144 -172 166 150 MAG 0.042 0.040 0.040 0.043 0.047 0.055 0.066 0.076 0.083 0.063 0.032 0.017 0.022 0.034 0.037 S12 ANG 23 19 22 32 34 35 30 18 -4 -41 -82 -141 128 101 82 MAG 0.23 0.25 0.30 0.32 0.34 0.36 0.36 0.37 0.38 0.45 0.57 0.61 0.66 0.73 0.75 S22 ANG -131 -143 -149 -154 -160 -168 178 159 136 95 65 49 27 11 -2 Caution S-Parameters include bond wires. START 2 GHz, STOP 16 GHz, STEP 1 GHz S11 1.0 0.5 2.0 +135 S12 +90 +45 16 GHz 0 0.5 0.5 0.5 +180 2 GHz 0 2 GHz 16 GHz -0.5 -1.0 Rmax = 1 S21 +90 +135 2 GHz +45 -135 -90 Rmax = 0.1 -45 -2.0 S22 1.0 0.5 2.0 +180 16 GHz 0 0 0.5 1.0 2 GHz 2.0 16 GHz -135 -90 -45 -0.5 -1.0 -2.0 Rmax = 1 Rmax = 5 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 07/18/2001 |
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